THE EFFECT OF RADIATION DEFECTS ON THE PHOTOCONDUCTIVITY OF ALLOYED MICRO-NANOCRYSTALLINE SILICON SAMPLES

Authors

  • I.X.Saydoqulov Namangan Academic Lyceum under the Ministry of Internal Affairs of the Republic of Uzbekistan
  • J.Z. Mirzarayimov Namangan Academic Lyceum under the Ministry of Internal Affairs of the Republic of Uzbekistan

Keywords:

photodetector, Fermi level, p-n-type, silicon, comparative resistance, potential barrier, deep energy level, copper, iridium, radiation defect, conduction band.

Abstract

The creation of thermos and photo sensors that are inexpensive and sensitive to external influences, which form radiation defects in silicon samples, is an urgent task in semiconductor physics and technology.

This work employs a radiation irradiation technology to obtain condensed monocrystalline silicon material by irradiating a Janine silicon monocrystal with fast neutrons. This method allows for the targeted modification of the photoelectric parameters of the sample. The use of irradiation methods for technological purposes involves, on one hand, the management of the composition of the resulting defects, and on the other hand, the search for ways to optimize the radiative technological process.

References

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M. Yu. Tashmetov, Sh. A. Makhmudov, A. A. Sulaimonov, A. K. Rafikov, B. Zh. Abdurayimov. "Photosensors Based on Neutron Doped Silicon." ISSN 0003-701X, Applied Solar Energy, 2019, Vol. 55, No. 1, pp. 71–73.

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Published

2025-10-31

How to Cite

I.X.Saydoqulov, & J.Z. Mirzarayimov. (2025). THE EFFECT OF RADIATION DEFECTS ON THE PHOTOCONDUCTIVITY OF ALLOYED MICRO-NANOCRYSTALLINE SILICON SAMPLES. INTERNATIONAL JOURNAL OF SOCIAL SCIENCE & INTERDISCIPLINARY RESEARCH ISSN: 2277-3630 Impact Factor: 8.036, 14(10), 11–18. Retrieved from https://www.gejournal.net/index.php/IJSSIR/article/view/2756

Issue

Vol. 14 No. 10 (2025): INTERNATIONAL JOURNAL OF SOCIAL SCIENCE & INTERDISCIPLINARY RESEARCH

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